Simulation Model Development for Packaged Cascode Gallium Nitride Field-Effect Transistors
نویسندگان
چکیده
منابع مشابه
Simulation Model Development for Packaged Cascode Gallium Nitride Field-Effect Transistors
This paper presents a simple behavioral model with experimentally extracted parameters for packaged cascode gallium nitride (GaN) field-effect transistors (FETs). This study combined a level-1 metal–oxide–semiconductor field-effect transistor (MOSFET), a junction field-effect transistor (JFET), and a diode model to simulate a cascode GaN FET, in which a JFET was used to simulate a metal-insulat...
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ژورنال
عنوان ژورنال: Crystals
سال: 2017
ISSN: 2073-4352
DOI: 10.3390/cryst7080250